Group Seminar 2022/23
- Date
- Wednesday 9 November 2022, 14:00-15:00
- Location
- Electrical Engineering SR 3.52
- Speaker
- Dr Naoto Yamashita
- Institution
- Information Science and Electrical Engineering, Kyushu University
- Title
- Semiconductor spintronics － device application and the design
- Category
- Group Seminar
Abstract:
Spin Metal-Oxide-Semiconductor Field-Effect transistor (MOSFET) is a promising device [1] using a fundamental material in electronics: silicon (Si). Electrical spin current injection into Si has been realized in 2007 [2] by overcoming the hurdle of “conductance-mismatch”. In the last decade, transport of spin current in Si has been studied extensively and the room temperature operation has been realized in 2015 [3].
In this seminar, I will give an overview of recent work on Si spintronics focusing on application for spin MOSFET. To enhance spin signals, three different approaches has been proposed [4-7]. These works show that the conductance-mismatch has appeared again and possible solution will be proposed.
Reference:
[1] S. Sugahara and M. Tanaka, Appl. Phys. Lett. 84, 2307 (2004).
[2] I. Appelbaum, B. Huang, and D. J. Monsma, Nature 447, 295-298 (2007).
[3] T. Tahara, Y. Ando, M. Shiraishi, et al., Appl. Phys. Express 8, 113004 (2015).
[4] N. Yamashita, Y. Ando, M. Shiraishi, et al., Phys. Rev. Applied 9, 054002 (2018).
[5] N. Yamashita, Y. Ando, M. Shiraishi, et al., AIP Advances 10, 095021 (2020).
[6] N. Yamashita, Y. Ando, M. Shiraishi, et al., Sci. Rep. 11, 10583 (2021).
[7] N. Yamashita, M. Shiraishi, Y. Ando, et al., Phys. Rev. Mater. (2022).