Materials from the Royce Deposition System
Thin film materials available for academia and industry
Materials from the Royce Deposition System are available to academia and industry. The system is designed to be flexible, with different types of materials and a range of growth techniques, allowing us to build complex heterostructures with novel interfaces. Within the Condensed Matter Group we have a wealth of experience in thin film growth and dedicated experimental officers who can provide fully characterised samples.
Below are examples of thin film materials that have been optimised in the system.
Expitaxial SrRuO3 grown in the Pulsed Laser Deposition chamber on a SrTiO3 substrate
Perpendicular magnetic anisotropy
Out-of-plane magnetic materials such as ultrathin magnetic trilayer Pt/Co/Pt, grown in the Sputtering chamber
Magnetic multilayers for skymionic devices
Sputtered [Pt/CoB/Ir]n multilayers with interfacial Dzyaloshinskii-Moriya interaction
Materials by chamber
Topological Materials MBE
Five effusion cells and two cracker cells are mounted on the chamber. The materials in the MBE cannot be changed regularly and the chamber is dedicated to deposition of topological insulators.Effusion cells:
In, Ge, Se, Bi, SnCracker cells:
Pulsed Laser Deposition
The target stage can hold up to five targets at a time. The target stage can be loaded/unloaded through the load lock making it possible to change materials as needed.Targets include:
SrTiO3, SrRuO3, BiFeO3, YIG, ITO
Seven magnetrons mounted confocally on the base and one off-axis magnetron is mounted at the side. Targets can be changed during routine maintenance (usually every 6-8 weeks).Target include:
Au, Pt, Ir, Nb, Ta, Co, Co62B32, YIG
The chamber includes four low temperature effusion cells, an e-beam evaporator and a DC/RF magnetron sputter gun. Materials can be changed during routine maintenance (usually every 2-3 months).Effusion cell:
Al, Au, C60, CuPcE-beam evaporator:
Co, Ni, Pt, CuSputter target:
Spin-valve Josephson junctions with perpendicular magnetic anisotropy for cryogenic memory
N. Satchell, P. M. Shepley, M. Algarni, M. Vaughan, E. Darwin, M. Ali, M. C. Rosamond, L. Chen, E. H. Linfield, B. J. Hickey, and G. Burnell, Appl. Phys. Lett. 116, 022601 (2020).