Materials
Optimised materials
Materials from the Royce Deposition System are available to academia and industry. The system is designed to be flexible, with different types of materials and a range of growth techniques, allowing us to build complex heterostructures with novel interfaces. Within the Condensed Matter Group we have a wealth of experience in thin film growth and dedicated experimental officers who can provide fully characterised samples. Below are examples of thin film materials that have been optimised in the system.
Bismuth telluride
Epitaxial Bi2Te3 thin films grown by MBE in the Topological Materials chamber
Topological-organic interfaces
Epitaxial Bi2Se3/C60 grown by MBE in the Topological Materials and Organics chambers
Epitaxial platinum
Epitaxial Pt grown by e-beam evaporation in the Organics chamber
Fullerenes
Epitaxial Pt/C60, on a sapphire substrate, grown in the Organics chambers
Textured sputtered films
(111) textured Pt films grown in the Sputtering chamber
Strontium ruthenate
Expitaxial SrRuO3 grown in the Pulsed Laser Deposition chamber on a SrTiO3 substrate
Strontium titanate
Polycrystalline SrTiO3 grown in the Pulsed Laser Deposition chamber on a platinised glass substrate
Perpendicular magnetic anisotropy
Out-of-plane magnetic materials such as ultrathin magnetic trilayer Pt/Co/Pt, grown in the Sputtering chamber
Bismuth ferrite
Multiferroic BiFeO3 grown epitaxially by Pulsed Laser Deposition
Magnetic multilayers for skymionic devices
Sputtered [Pt/CoB/Ir]n multilayers with interfacial Dzyaloshinskii-Moriya interaction
Epitaxial niobium
Sputtered niobium grown epitaxially on sapphire substrates
Superconducting and ferromagnetic devices
Hybrid superconductor-ferromagnet devices built from sputtered multilayers
Materials by chamber
Topological Materials MBE
Five effusion cells and two cracker cells are mounted on the chamber. The materials in the MBE cannot be changed regularly and the chamber is dedicated to deposition of topological insulators.
Effusion cells:
In, Ge, Se, Bi, Sn
Cracker cells:
Sb, Te
Pulsed Laser Deposition
The target stage can hold up to five targets at a time. The target stage can be loaded/unloaded through the load lock making it possible to change materials as needed.
Targets include:
SrTiO3, SrRuO3, BiFeO3, YIG, ITO
Sputtering
Seven magnetrons mounted confocally on the base and one off-axis magnetron is mounted at the side. Targets can be changed during routine maintenance (usually every 6-8 weeks).
Target include:
Au, Pt, Ir, Ru,
Nb, Ta,
Co, Co62B32, CoFe,
YIG
Organics
The chamber includes four low temperature effusion cells, an e-beam evaporator and a DC/RF magnetron sputter gun. Materials can be changed during routine maintenance (usually every 2-3 months).
Effusion cell:
MnPc, C60, H2Pc
E-beam evaporator:
Pt, Co, Py, Au
Sputter target:
Cu
Publications
Strain-coupled domains in BaTiO3(111)-CoFeB heterostructures
Effects of structural ordering on infrared active vibrations within Bi2(Te(1-x)Se(x))3
Observation of a molecular muonium polaron and its application to probing magnetic and electronic states
M. Rogers, T. Prokscha, G. Teobaldi, Leandro Liborio, S. Sturniolo, E. Poli, D. Jochym, R. Stewart, M. Flokstra, S. Lee, M. Ali, B. J. Hickey, T. Moorsom, and O. Cespedes
Pt and CoB trilayer Josephson π junctions with perpendicular magnetic anisotropy
N. Satchell, T. Mitchell, P. M. Shepley, E. Darwin, B. J. Hickey & G. Burnell
Spin-valve Josephson junctions with perpendicular magnetic anisotropy for cryogenic memory
N. Satchell, P. M. Shepley, M. Algarni, M. Vaughan, E. Darwin, M. Ali, M. C. Rosamond, L. Chen, E. H. Linfield, B. J. Hickey, and G. Burnell