Materials

Materials from the Royce Deposition System

Thin film materials available for academia and industry

Optimised materials

Materials from the Royce Deposition System are available to academia and industry. The system is designed to be flexible, with different types of materials and a range of growth techniques, allowing us to build complex heterostructures with novel interfaces. Within the Condensed Matter Group we have a wealth of experience in thin film growth and dedicated experimental officers who can provide fully characterised samples.

Below are examples of thin film materials that have been optimised in the system.

Epitaxial Bi2Te3 thin films grown by MBE in the Topological Materials chamber

Application note for bismuth telluride

Epitaxial Bi2Se3/C60 grown by MBE in the Topological Materials and Organics chambers

Application note for BiSe/C60

Epitaxial Pt grown by e-beam evaporation in the Organics chamber

Application note for epitaxial Pt

Epitaxial Pt/C60, on a sapphire substrate, grown in the Organics chambers

Application note for crystalline C60

(111) textured Pt films grown in the Sputtering chamber

Application note for textured platinum
Strontium ruthenate

Expitaxial SrRuO3 grown in the Pulsed Laser Deposition chamber on a SrTiO3 substrate

Polycrystalline SrTiO3 grown in the Pulsed Laser Deposition chamber on a platinised glass substrate
Application note on polycrystalline strontium titanate
Perpendicular magnetic anisotropy

Out-of-plane magnetic materials such as ultrathin magnetic trilayer Pt/Co/Pt, grown in the Sputtering chamber

Multiferroic BiFeO3 grown epitaxially by Pulsed Laser Deposition

Application note on bismuth ferrite
Magnetic multilayers for skymionic devices

Sputtered [Pt/CoB/Ir]n multilayers with interfacial Dzyaloshinskii-Moriya interaction

Hybrid superconductor-ferromagnet devices built from sputtered multilayers

Publication on Josephson junctions

Materials by chamber

Five effusion cells and two cracker cells are mounted on the chamber. The materials in the MBE cannot be changed regularly and the chamber is dedicated to deposition of topological insulators.

Effusion cells:

In, Ge, Se, Bi, Sn

Cracker cells:

Sb, Te

The target stage can hold up to five targets at a time. The target stage can be loaded/unloaded through the load lock making it possible to change materials as needed.

Targets include:

SrTiO3, SrRuO3, BiFeO3, YIG, ITO

Seven magnetrons mounted confocally on the base and one off-axis magnetron is mounted at the side. Targets can be changed during routine maintenance (usually every 6-8 weeks).

Target include:

Au, Pt, Ir, Nb, Ta, Co, Co62B32, YIG

The chamber includes four low temperature effusion cells, an e-beam evaporator and a DC/RF magnetron sputter gun. Materials can be changed during routine maintenance (usually every 2-3 months).

Effusion cell:

Al, Au, C60, CuPc

E-beam evaporator:

Co, Ni, Pt, Cu

Sputter target:

Nb

Publications

Published papers

Spin-valve Josephson junctions with perpendicular magnetic anisotropy for cryogenic memory

N. Satchell, P. M. Shepley, M. Algarni, M. Vaughan, E. Darwin, M. Ali, M. C. Rosamond, L. Chen, E. H. Linfield, B. J. Hickey, and G. Burnell, Appl. Phys. Lett. 116, 022601 (2020).

eprints.whiterose.ac.uk/155064